Publication

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Publications associées (32)

Scalable Quantum Algorithms for Noisy Quantum Computers

Quantum computing not only holds the potential to solve long-standing problems in quantum physics, but also to offer speed-ups across a broad spectrum of other fields. Access to a computational space that incorporates quantum effects, such as superposition ...

EPFL2024

Mott physics in the multiflavored age

Frédéric Mila

The multiflavor Mott insulators, whose local Hilbert space consists of multiple degrees of freedom, occur widely in both quantum materials and ultracold atom systems. This Comment recommends the review article by Chen and Wu that is, to the author's knowle ...

Nature Portfolio2024

Dual-frame optimization for informationally complete quantum measurements

Ivano Tavernelli

Randomized measurement protocols such as classical shadows represent powerful resources for quantum technologies, with applications ranging from quantum state characterization and process tomography to machine learning and error mitigation. Recently, the n ...

2024

Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

Drazen Dujic, Nikolina Djekanovic, Renan Pillon Barcelos

This paper focuses on the operational characteristics of a medium voltage resonant DC transformer based on a split capacitor IGCT 3L-NPC leg. The study delves into both the dynamic and static balancing aspects of the 3L-NPC when operating in a two-level, 5 ...

2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Hybrid ground-state quantum algorithms based on neural Schrödinger forging

Giuseppe Carleo, Sofia Vallecorsa

Entanglement forging based variational algorithms leverage the bipartition of quantum systems for addressing ground-state problems. The primary limitation of these approaches lies in the exponential summation required over the numerous potential basis stat ...

Amer Physical Soc2024

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023

A squeezed mechanical oscillator with millisecond quantum decoherence

Tobias Kippenberg, Amir Youssefi, Mahdi Chegnizadeh, Shingo Kono

An enduring challenge in constructing mechanical-oscillator-based hybrid quantum systems is to ensure engineered coupling to an auxiliary degree of freedom and maintain good mechanical isolation from the environment, that is, low quantum decoherence, consi ...

NATURE PORTFOLIO2023

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Mahsa Shoaran, Yasemin Engür

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023