Publication

Multi-Objective BDD Optimization for RRAM based Circuit Design

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Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

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Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

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Energy efficiency remains a challenge for the design of non-volatile resistive memories (ReRAMs) arrays. This memory technology suffers from intrinsic variability in switching speed, programming voltages and resistance levels. The programming conditions of ...

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