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Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Publications associées (27)

Single photon detection with amorphous silicon-based microchannel plates: A Monte Carlo model

Christophe Ballif, Nicolas Würsch, Jonathan Emanuel Thomet, Janina Christine Isabelle Löffler, Samira Alexandra Frey

Microchannel plates based on amorphous silicon have the inherent capability to overcome the existing spatial and temporal resolution limitations of single photon detectors. A Monte Carlo model-based study is presented here that serves to exploit their full ...

2022

New Insights for Parasitic Effects of Label-Free Biosensors Based on Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Jie Li, Yihe Zhao

Capacitive micromachined ultrasonic transducers (CMUTs) are regarded as an attractive candidate in bio-applications such as imaging and molecule monitoring. However, the previous researches on biochemical sensing are mostly air-coupled application based on ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Andras Kis, Aleksandra Radenovic, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Claudio Bruschini, Edoardo Charbon, Arin Can Ülkü, Andrei Ardelean, Paul Mos, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

SiGe Time Resolving Pixel Detectors for High Energy Physics and Medical Imaging

Fulvio Martinelli

In the last years, sub-nanosecond time-resolved particle detectors have been object of research by many companies and institutes since they represent an efficient tool to improve the performance of detecting systems for various applications such as High En ...

EPFL2022

On the Modeling of Organic Electrochemical Transistors

Matteo Cucchi

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

SPIE-INT SOC OPTICAL ENGINEERING2022