A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Andras Kis, Aleksandra Radenovic, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

In-Memory Hardware and Architectural Extensions for Workloads Acceleration

William Andrew Simon

Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cases lim ...

EPFL2022

On the Modeling of Organic Electrochemical Transistors

Matteo Cucchi

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

SPIE-INT SOC OPTICAL ENGINEERING2022

AstriFlash: A Flash-Based System for Online Services

Babak Falsafi, Mark Johnathon Sutherland, Siddharth Gupta, Lei Yan, Yunho Oh

Modern datacenters host datasets in DRAM to offer large-scale online services with tight tail-latency requirements. Unfortunately, as DRAM is expensive and increasingly difficult to scale, datacenter operators are forced to consider denser storage technolo ...

2023

Reinforcement Learning-Based Joint Reliability and Performance Optimization for Hybrid-Cache Computing Servers

David Atienza Alonso, Ali Pahlevan, Marina Zapater Sancho, Luis Maria Costero Valero, Darong Huang

Computing servers play a key role in the development and process of emerging compute-intensive applications in recent years. However, they need to operate efficiently from an energy perspective viewpoint, while maximizing the performance and lifetime of th ...

2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Giovanni Boero, Jürgen Brugger, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

STEPS 4.0: Fast and memory-efficient molecular simulations of neurons at the nanoscale

Felix Schürmann, James Gonzalo King, Christos Kotsalos, Pramod Shivaji Kumbhar, Iain Hepburn, Weiliang Chen, Tristan Mathieu Carel, Samuel Marie A Melchior, Omar Awile, Baudouin Paul Michel Maria Joseph Del Marmol, Alessandro Cattabiani, Giacomo Castiglioni, Nicola Cantarutti

Recent advances in computational neuroscience have demonstrated the usefulness and importance of stochastic, spatial reaction-diffusion simulations. However, ever increasing model complexity renders traditional serial solvers, as well as naive parallel imp ...

FRONTIERS MEDIA SA2022

Method for reading and writing unreliable memories and a corresponding memory controller device and memory

Andreas Peter Burg, Reza Ghanaatian Jahromi

A method of accessing a memory space of a memory device with a decoder, the memory space having faults, including the steps of performing a memory access operation by an electronic device to a access a logical memory space of the memory device, and randomi ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Page 2 sur 2