Publication

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Publications associées (31)

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Chaosity: Understanding Contemporary NUMA-architectures

Anastasia Ailamaki, Viktor Sanca, Syed Mohammad Aunn Raza, Hamish Mcniece Hill Nicholson, Andreea Nica

Modern hardware is increasingly complex, requiring increasing effort to understand in order to carefully engineer systems for optimal performance and effective utilization. Moreover, established design principles and assumptions are not portable to modern ...

2023

Silicon spin qubits from laboratory to industry

Edoardo Charbon, Louis Hutin

Quantum computation (QC) is one of the most challenging quantum technologies that promise to revolutionize data computation in the long-term by outperforming the classical supercomputers in specific applications. Errors will hamper this quantum revolution ...

IOP Publishing Ltd2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

James Daniel Rosenthal

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

IEEE2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

In-Memory Hardware and Architectural Extensions for Workloads Acceleration

William Andrew Simon

Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cases lim ...

EPFL2022

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Method for reading and writing unreliable memories and a corresponding memory controller device and memory

Andreas Peter Burg, Reza Ghanaatian Jahromi

A method of accessing a memory space of a memory device with a decoder, the memory space having faults, including the steps of performing a memory access operation by an electronic device to a access a logical memory space of the memory device, and randomi ...

2022

An Energy-Efficient Bridge-to-Digital Converter for Implantable Pressure Monitoring Systems

Marco Mattavelli, Catherine Dehollain, Diego Ruben Barrettino, Franco Maloberti, Kerim Türe, Mustafa Besirli

This paper presents an energy-efficient, duty-cycled, and spinning excitation bridge-to-digital converter (BDC) designed for implantable pressure sensing systems. The circuit provides the measure of the pulmonary artery pressure that is particularly releva ...

2022