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Silicon nitride electric-field poled microresonator modulator

Publications associées (30)

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We demonstrate a figure-of-9 all-fiber thulium-doped laser (TDFL) that generates 560 fs long pulses at 1948 nm wavelength. In order to achieve self-starting passive mode-locking, we utilize an in-fiber Faraday rotator to induce a nonreciprocal phase shift. ...

Iop Publishing Ltd2024

Band Gap Renormalization at Different Symmetry Points in Perovskites

Majed Chergui, Lijie Wang

Using ultrafast broad-band transient absorption (TA) spectroscopy of photoexcited MAPbBr3 thin films with probe continua in the visible and the mid- to deep-ultraviolet (UV) ranges, we capture the ultrafast renormalization at the fundamental gap at the R s ...

Amer Chemical Soc2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

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Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

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In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Experimental observation of topological transition in linear and nonlinear parametric oscillators

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Parametric oscillators are examples of externally driven systems that can exhibit two stable states with opposite phase depending on the initial conditions. In this work, we propose to study what happens when the external forcing is perturbed by a continuo ...

2024

Hybrid lithium niobate-on-silicon nitride platform for mid-IR supercontinuum generation

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Integrated optics has shown itself very convenient for exploiting nonlinear processes as it results in high confinement factor, freedom of dispersion engineering and compactness. However, the choice of materials is crucial for the development of nonlinear ...

SPIE-INT SOC OPTICAL ENGINEERING2023

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Rui Ning Wang, Tobias Kippenberg, Junqiu Liu, Miles Henry Anderson, Mikhail Churaev, Anat Siddharth, Viacheslav Snigirev

The availability of thin-film lithiumniobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-s ...

Nature Portfolio2023

Programmable Silicon Nitride Photonic Integrated Circuits

Rui Ning Wang, Tobias Kippenberg, Andrey Voloshin, Anat Siddharth, Viacheslav Snigirev, Andrea Bancora, Vladimir Shadymov

Silicon Nitride (Si3N4) photonic integrated circuits (PICs) have emerged as core technology in a variety of applications ranging from LIDAR to quantum control and computing. However, the need for high-speed, low-voltage tuning and modulation has been a lon ...

IEEE2023

High density lithium niobate photonic integrated circuits

Rui Ning Wang, Tobias Kippenberg, Mikhail Churaev, Anat Siddharth, Zelin Tan, Nikolai Kuznetsov, Zihan Li, Junyin Zhang

Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited to bulk optics. Of particular interest for new applications are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but ar ...

Nature Portfolio2023

Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

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Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023