Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

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The reported rate of the occurrence of unilateral spatial neglect (USN) is highly variable likely due to the lack of validity and low sensitivity of classical tools used to assess it. Virtual reality (VR) assessments try to overcome these limitations by pr ...

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High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

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In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

Infrared spectroscopy provides unique information on the composition and dynamics of biochemical systems by resolving the characteristic absorption fingerprints of their constituent molecules. Based on this inherent chemical specificity and the capability ...

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

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Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

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In situ detection of multitarget impurities on contact lens by electrochemical scanning probe

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Modelling of metal alloys in realistic conditions with machine learning

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Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Metasurface-Enhanced Infrared Spectroscopy: An Abundance of Materials and Functionalities