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Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

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Publications associées (33)

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Tri-gate technologies for high-performance power GaN devices

Jun Ma

GaN-based electronic devices have great potential for future power applications, thanks to their wide band-gap, high breakdown electric field, and high electron mobility. In addition, these devices can be integrated on large-size Si substrates and enable n ...

EPFL2019

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

Emanuele Andrea Casu

In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

Resistive Switching Element and Use Thereof

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Shashi Kanth Bobba, Tugba Demirci

A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at ...

2016

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Cem Alper, Anna Krammer, Arnab Biswas, Emanuele Andrea Casu, Teodor Rosca, Nicolò Oliva

In this paper we report the first hybrid Phase-Change - Tunnel FET (PC-TFET) device configurations for achieving a deep sub-thermionic steep subthreshold swing at room temperature and subthreshold power savings. The proposed hybrid device feedbacks the ste ...

IEEE2016

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

Luca Petit, Mihai Adrian Ionescu, Andreas Schueler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Clara-Fausta Moldovan, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2) as a future replacement solution for microelectromechanical capacitive switches. We prese ...

Elsevier Science Sa2016

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Anna Krammer, Emanuele Andrea Casu, Arnab Biswas, Cem Alper, Teodor Rosca

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Research2017

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Lin Yang

In this thesis I study the synthesis and basic physical properties characterization on 3

d

, 4

d

and 5

d

transition metal compounds. Great success has been obtained in 3

d

transition metal compounds, in which the electric states are well localized due t ...

EPFL2017

Spin and orbital disordering by hole doping in Pr1-xCaxVO3

Philip Pattison

High-resolution powder x-ray diffraction and single-crystal neutron diffraction were used to investigate the crystal structure and magnetic ordering of the compound Pr1-xCax VO3 (0

Amer Physical Soc2016

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Olivier Martin, Mihai Adrian Ionescu, Arnaud Magrez, Andreas Schueler, Igor Stolichnov, Anna Krammer, Emanuele Andrea Casu, Chen Yan, Teodor Rosca, Nicolò Oliva

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of mate ...

Nature Research2017

Spectroscopic Studies of the Electronic Structure in Layered Cuprates and Ruthenates

Claudia Giuseppina Fatuzzo

In materials where electrons interact strongly, a number of exotic and exciting phenomena arise. The mechanisms at the base of many of these phenomena remain debated, as strongly correlated electron physics represents one of the biggest challenges for mode ...

EPFL2017

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Clara-Fausta Moldovan, Antonio Paone

We report the fabrication, modeling and characterization of novel microwave tunable capacitors based on the metal-insulator transition (MIT) of Vanadium Dioxide (VO2). We present the advantages of VO2-based capacitors over alternative technologies for micr ...

2015

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

Wolfgang Amadeus Vitale

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016

CDW and Similarity of the Mott Insulator-to-Metal Transition in Cuprates with the Gas-to-Liquid-Liquid Transition in Supercooled Water

Davide Innocenti

New advances in X-ray diffraction, extended X-ray absorption fine structure (EXAFS), and X-ray absorption near edge structure (XANES) using synchrotron radiation have now provided compelling evidence for a short-range charge density wave phase (CDW) called ...

Springer2015