Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

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Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

High-level synthesis (HLS) is the process of automatically generating circuits out of high-level language descriptions. Previous research has shown that dynamically scheduled HLS through elastic circuit generation is successful at exploiting parallelism in ...

This paper proposes a Control by Interconnection design, for a class of constrained Port-Hamiltonian systems, which is based on an associated Model Predictive Control optimization problem. This associated optimization problem allows to consider both state ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Thermally stimulated current (TSC) is a widely used technique to assess trap states and extract their density, energy, and capture rate using analytical expressions. In many cases, the latter are derived from physical models pertaining to inorganic semicon ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

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Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Unleashing Parallelism in Elastic Circuits with Faster Token Delivery

A combined Control by Interconnection—Model Predictive Control design for constrained Port-Hamiltonian systems

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Scrutinizing thermally stimulated current transients originating from trapped charges in organic semiconductors: A drift-diffusion study

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits