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Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

Publications associées (31)

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Andras Kis, Aleksandra Radenovic, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

A combined Control by Interconnection—Model Predictive Control design for constrained Port-Hamiltonian systems

Anna Ngoc Minh Trang Vu

This paper proposes a Control by Interconnection design, for a class of constrained Port-Hamiltonian systems, which is based on an associated Model Predictive Control optimization problem. This associated optimization problem allows to consider both state ...

2022

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Rebekah Anne Wells

Two-dimensional (2D) transition metal dichalcogenides (TMDs) possess remarkable optoelectronic properties which are unique and tunable based on composition and thickness. These materials are posed to revolutionize ultrathin devices across many fields inclu ...

EPFL2022

Scrutinizing thermally stimulated current transients originating from trapped charges in organic semiconductors: A drift-diffusion study

Frank Nüesch, Beat Ruhstaller

Thermally stimulated current (TSC) is a widely used technique to assess trap states and extract their density, energy, and capture rate using analytical expressions. In many cases, the latter are derived from physical models pertaining to inorganic semicon ...

AIP Publishing2022

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Giovanni De Micheli, Heinz Riener, Alessandro Tempia Calvino, Shubham Rai, Akash Kumar

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

2022

Unleashing Parallelism in Elastic Circuits with Faster Token Delivery

Paolo Ienne, Lana Josipovic, Andrea Guerrieri, Ayatallah Ahmed Gamal Kamal Elakhras

High-level synthesis (HLS) is the process of automatically generating circuits out of high-level language descriptions. Previous research has shown that dynamically scheduled HLS through elastic circuit generation is successful at exploiting parallelism in ...

IEEE COMPUTER SOC2022

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal phase transition in Vanadium dioxide

Fatemeh Qaderi Rahaqi

Millimeter-wave (mm-wave) and terahertz (THz) detection has opened a significant research direction in imaging, sensing, spectroscopy, and ultrafast wireless communication. The sensitivity of the phase transition to electromagnetic waves in Vanadium dioxid ...

EPFL2022

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Pirouz Sohi, Catherine Erine, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021