Embedded non–volatile memory study with surface potential based model

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Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

A method of accessing a memory space of a memory device with a decoder, the memory space having faults, including the steps of performing a memory access operation by an electronic device to a access a logical memory space of the memory device, and randomi ...

We have witnessed a wide range of theoretical as well as experimental investigations to envisage external stimuli induced changes in electronic, optical and magnetic properties in the metal organiccomplexes, while hybrid perovskites have recently joined th ...

Computing servers play a key role in the development and process of emerging compute-intensive applications in recent years. However, they need to operate efficiently from an energy perspective viewpoint, while maximizing the performance and lifetime of th ...

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The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

Computing the count of distinct elements in large data sets is a common task but naive approaches are memory-expensive. The HyperLogLog (HLL) algorithm (Flajolet et al., 2007) estimates a data set's cardinality while using significantly less memory than a ...

Modern datacenters host datasets in DRAM to offer large-scale online services with tight tail-latency requirements. Unfortunately, as DRAM is expensive and increasingly difficult to scale, datacenter operators are forced to consider denser storage technolo ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

This article presents a design-for-test methodology for embedded memories. The methodology relies on a fully random fault model of post-fabrication errors, which results in a low-overhead test strategy. The methodology's effectiveness is demonstrated on an ...

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

Embedded non–volatile memory study with surface potential based model

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