Publication

Tunable floating active inductor with internal offset reduction

Publications associées (31)

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

97.4%-Efficient All-GaN Dual-Active-Bridge Converter with High Step-up High-Frequency Matrix Transformer

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Mohammad Samizadeh Nikooytabalvandani

In this work, we demonstrate a state-of-the-art high step-up/down dual-active-bridge (DAB) converter designed with GaN transistors, to achieve a high efficiency and large power-density. A quasi-planar matrix transformer with high step-up/down ratio is demo ...

2020

Data Structures and Algorithms for Logic Synthesis in Advanced Technologies

Eleonora Testa

Logic synthesis is a key component of digital design and modern EDA tools; it is thus an essential instrument for the design of leading-edge chips and to push the limits of their performance. In the last decades, the electronic circuits community has evolv ...

EPFL2020

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Cédric Klinkert, Davide Campi

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

A 6.5-GHz Cryogenic All-Pass Filter Circulator in 40-nm CMOS for Quantum Computing Applications

Edoardo Charbon, Fabio Sebastiano, Andrea Ruffino, Yatao Peng

Cryogenic solid-state quantum processors require classical control and readout electronics; to achieve compactness and scalability, cryogenic integrated circuits have been recently proposed for this goal. Circulators are widely used in readout circuits, ho ...

2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

Jens Anders, Georg Fantner

In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...

IEEE2019

Modeling and Design Optimization of Medium Frequency Transformers for Medium-Voltage High-Power Converters

Marko Mogorovic

Novel high-power medium-voltage converter technologies offering galvanic insulation are needed to support the development of the emerging medium-voltage direct-current grids and further improve the performance of various other applications such as traction ...

EPFL2019

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019