Publication

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Publications associées (29)

Resonators with tailored optical path by cascaded-mode conversions

Ileana-Cristina Benea-Chelmus, Marco Piccardo

Optical resonators enable the generation, manipulation, and storage of electromagnetic waves. The physics underlying their operation is determined by the interference of electromagnetic waves, giving rise to the resonance spectrum. This mechanism causes th ...

Nature Portfolio2023

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

EPFL2023

Evaluating, Exploiting, and Hiding Power Side-Channel Leakage of Remote FPGAs

Ognjen Glamocanin

The pervasive adoption of field-programmable gate arrays (FPGAs) in both cyber-physical systems and the cloud has raised many security issues. Being integrated circuits, FPGAs are susceptible to fault and power side-channel attacks, which require physical ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Heng Fang, Rui Lu, Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Damping of flexure blades based on bi-material additive manufacturing

Simon Nessim Henein, Florent Cosandier, Nicolas Blondiaux, Elias Sebastian Klauser, Loïc Benoît Tissot-Daguette, Nikola Kalentics, Lisa Salamin, Florent Alexandre Boudoire

Flexure-based mechanisms have become state-of-the-art solutions for the design of high-precision mechanisms, free from friction wear, backlash, and lubrication. These properties which are necessary for applications in ultraclean or harsh environments, neve ...

2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Jean-Michel Sallese, Adil Koukab, Stefano Michelis, Gennaro Termo

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023