Low-power RF modeling of a 40nm CMOS technology using BSIM6

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Deeply-scaled three-dimensional (3D) Multi-Processor Systems-on-Chip (MPSoCs) enable high performance and massive communication bandwidth for next-generation computing. However, as process nodes shrink, temperature-dependent leakage dramatically increases, ...

Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...

Recently, microresonator-based dissipative Kerr soliton frequency combs ( "soliton microcomb " ) have emerged as miniaturized optical frequency combs. So far, soliton microcombs have been realized in many CMOS-compatible material platforms including silico ...

Technology scaling has progressed to enable integrated circuits with extremely high density enabling systems of tremendous complexity with manageable power consumption. With the continuation of Moore's law for many years, electronic chips have been able to ...

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is ...

Single-photon avalanche diode (SPAD) imagers can perform fast time-resolved imaging in a compact form factor, by exploiting the processing capability and speed of integrated CMOS electronics. Developments in SPAD imagers have recently made them compatible ...

Low-power RF modeling of a 40nm CMOS technology using BSIM6

Chattez avec Graph Search

Towards Deeply Scaled 3D MPSoCs with Integrated Flow Cell Array Technology

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Silicon Nitride Integrated Nonlinear Photonics

Energy- and Cost-Efficient VLSI DSP Systems Design with Approximate Computing

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

ReRAM From Material Study to CMOS Co-integration

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager