Publications associées à Vertically-Stacked Si Nanowire FETs with sub-micrometer Gate-All-Around polysilicon gates patterned by nanostencil lithography

Publications associées (9)

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Novel Interfacial Characterization and Surface Engineering in Semiconductor Electrodes for Optimized Solar Fuel Production

Yongpeng Liu

Harvesting sunlight, the ultimate renewable power source, in a cost-effective way has been long recognized as a necessary route to meet the global energy challenges. Solar energy can be transformed into electricity by means of photovoltaic devices to suppl ...

EPFL2021

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager

Edoardo Charbon, Claudio Bruschini, Arin Can Ülkü, Ivan Michel Antolovic

Single-photon avalanche diode (SPAD) imagers can perform fast time-resolved imaging in a compact form factor, by exploiting the processing capability and speed of integrated CMOS electronics. Developments in SPAD imagers have recently made them compatible ...

2019

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Elizabeth Buitrago Godinez

A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized f ...

IEEE2013

Ultra low power: Emerging devices and their benefits for integrated circuits

Mihai Adrian Ionescu, Luca De Michielis, Ji Cao, Giovanni Antonio Salvatore, Nilay Dagtekin, Alexandru Rusu, Sebastian Thimotee Bartsch

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative ...

IEEE2011

Monolithic integration of Si nanowires with metallic electrodes: NEMS resonator and switch applications

Yusuf Leblebici, Davide Sacchetto

The challenge of wafer-scale integration of silicon nanowires into microsystems is addressed by developing a fabrication approach that utilizes a combination of Bosch-process-based nanowire fabrication with surface micromachining and chemical-mechanical-po ...

Institute of Physics2011

Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

Klaus Kern

Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V-1 s(-1) and the ring osci ...

Wiley2010