Publication

Use of gas bubbles for ultrasound Doppler flow velocity profile measurement

Publications associées (27)

Solar cell

The present invention relates to a solar cell comprising a semiconductor wafer (1), an emitter formed by at least one emitter region (20) which comprises at least a first layer (3) of a first conductivity type and a first contact layer (4) allowing a carri ...

2014

MgB2 Hollow Wires and Cables Embedded in a Mg Alloy Matrix

Pierluigi Bruzzone, Davide Uglietti

The brittleness of the MgB2 wires prevents performing a cable architecture with very small bending radius, similar to NbTi Rutherford cables. Consequently, it is important to reduce the thickness of the superconducting materials in order to increase its be ...

IEEE Institute of Electrical and Electronics Engineers2013

Tunable Electroacoustic Resonators through Active Impedance Control of Loudspeakers

Romain Boulandet

The current trend for multipurpose rooms requires enhanced acoustic treatments capable to meet ever more demanding specifications in terms of performance, compactness and versatility. The reason is the variety of activities to be hosted and the correspondi ...

EPFL2012

Magnetic domain wall propagation under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Evgeny Mikheev, Sebastian Riester

Control of magnetic domain walls (DWs) and their propagation is among the most promising development directions for future information-storage devices. The well-established tools for such manipulation are the spin-torque transfer from electrical currents a ...

American Physical Society2012

Elastic components for prosthetic skin

Stéphanie Lacour

We have developed two fundamental components to manufacture a prosthetic skin: a stretchable pressure sensor formed of piezoelectric elastomer/ferroelectret multilayer sandwiched between stretchable electrodes and stretchable thin-film transistors. The com ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Marcus Gonschorek

AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and starts to be studied intensively mainly for electronic applications. The aim of this work is manifold. Var ...

EPFL2011

Thermal Spin Transfer Torque and Transverse Spin Relaxation in Spin Valves

Haiming Yu

Spin caloritronics, i.e., the addition of thermal effects to the electrical and magnetic properties of nanostructures, has recently seen a rapid development. It has been predicted that a heat current can exert a spin torque on the magnetization in a nanost ...

EPFL2011

Publications associées (27)