Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

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Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

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Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

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