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Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Publications associées (31)

Role of Minimum Adhesive Wear Particle Size in Third-Body Layer Properties

Jean-François Molinari, Son-Jonathan Pham-Ba

We employ a novel discrete element method (DEM) force formulation to simulate adhesive wear and assess the effects of material and loading parameters on the properties of the third-body layer (TBL) formed during sliding motion. The study emphasizes the rol ...

2023

Beam homogeneity of caesium seeded SPIDER using a direct beamlet current measurement

The ITER Heating Neutral Beam (HNB) source prototype SPIDER (Source for the Production of Ions of Deuterium Extracted from a Radio frequency plasma), hosted at the Neutral Beam Test Facility (NBTF) in Padova, Italy, has recently started operating with evap ...

ELSEVIER SCIENCE SA2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Ashish Sharma, Francesco Piro

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Mahsa Shoaran, Yasemin Engür

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Giulia Rossi, Matthew James Large

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

500 MHz high resolution proximity sensors with fully integrated digital counter

Giovanni Boero, Nergiz Sahin Solmaz, Reza Farsi

We report on the design and characterization of two inductive proximity sensors based on LC oscillators operating at 500 MHz. The distance from the target is obtained by measuring the oscillation frequency variation. Both sensors contain an off-chip LC res ...

ELSEVIER SCI LTD2023

Method and setup for light detection and ranging

Tobias Kippenberg, Anton Lukashchuk

A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

Electronic Coupling of Metal-to-Insulator Transitions in Nickelate-Based Heterostructures

Jean-Marc Triscone, Duncan Thomas Lindsay Alexander, Bernat Mundet

In rare earth nickelates, the metal-to-insulator transition observed as a function of temperature can be described using an electronic and a structural order parameter. The electronic one is linked to the electronic disproportionation observed below the tr ...

WILEY2023

Improving Standard-Cell Design Flow using Factored Form Optimization

Giovanni De Micheli, Alessandro Tempia Calvino

Factored form is a powerful multi-level representation of a Boolean function that readily translates into an implementation of the function in CMOS technology. In particular, the number of literals in a factored form correlates strongly with the number of ...

IEEE2023