Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

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Mo-Ti alloys form solid solutions over a wide range of compositions, with lattice misfit parameters increasing significantly with titanium content. This indicates a strong increase in the critical stress for edge dislocation motion. Here, we probe the tran ...

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

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