Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

The fabrication of high-performance metal-oxide-based thin-film transistors (TFTs) on flexible and transparent polymer substrates by solution processes has garnered substantial interest, particularly for manufacturing flex-ible electronics. However, the an ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs

Chattez avec Graph Search

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

A perspective on multi-channel technology for the next-generation of GaN power devices

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Low-temperature and rapid photo-annealing process for metal-oxide thin-film transistors using combined excimer deep-ultraviolet and intensely pulsed light irradiation

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

GaN vertical power devices on silicon substrates

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Heterostructure design and field management in III-N high-electron mobility electronic devices