Publication

High-Voltage Sensitivity Studies of Model Thick-Film Resistors

Publications associées (31)

Thermodynamics of organic electrochemical transistors

Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework t ...

Nature Portfolio2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

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GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Three-dimensional in situ imaging of single-grain growth in polycrystalline In2O3:Zr films

Quentin Thomas Jeangros, Michael Elias Stückelberger, Monica Morales Masis

Understanding grain morphology and kinetics of solid-phase crystallization is important for controlling the functional properties of polycrystalline materials. Here, in situ coherent X-ray diffraction imaging and transmission electron microscopy elucidate ...

SPRINGERNATURE2022

On the structure of (111) twist grain boundaries in diamond: atomistic simulations with Tersoff-type interatomic potentials

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In nanocrystalline diamond thin films, the high grain boundary density and the associated grain boundary properties may dominate the overall material behavior. In the present work, we systematically investigate (111) twist grain boundaries in diamond carbo ...

PERGAMON-ELSEVIER SCIENCE LTD2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Raphaël Johannes Charles Mottet, Morgan Almanza, Lucas Pniak

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

High Frequency Operation of Series-Connected IGCTs for Resonant Converters

Drazen Dujic, Gabriele Ulissi

Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...

2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

Institute of Electrical and Electronics Engineers2021

Ultra High Voltage Switch for Bidirectional DC-DC Converter Driving Dielectric Elastomer Actuator

Yves Perriard, Yoan René Cyrille Civet, Morgan Almanza, Lucas Pniak

Specific applications, such as dielectric elastomer actuators (DEAs) or electroactive polymers, require to switch voltage levels exceeding the ratings of existing semiconductor devices. In low power application, reversible flyback are widely used to supply ...

2020

Slip Ring Test Assembly With Increased Breakdown Voltage Limit for High-Voltage Bus Satellites

Alan Howling, Ivo Furno, Fabio Avino

In this article, a setup including a passive gas breakdown mitigation technique for satellite slip ring assemblies (SRAs) is introduced and tested. The setup features a central conducting ring, separated from two external conducting limiting discs (LDs) by ...

2020