Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
State-of-the-art halide perovskite solar cells employ semiconductor oxides as electron transportmaterials. Defects in these oxides, such as oxygen vacancies (Ovac), act as recombination centres and, in air and UV light, reduce the stability of the solar cell. Under the same conditions, the PbZrTiO3 ferroelectric oxide employsOvac for the creation of defect-dipoles responsible for photo-carrier separation and current transport, evading device degradation. We report the application of PbZrTiO3 as the electron extraction material in triple cation halide perovskite solar cells. The application of a bias voltage (poling) up to 2 V, under UV light, is a critical step to induce charge transport in the ferroelectric oxide. Champion cells result in power conversion efficiencies of similar to 11% after poling. Stability analysis, carried out at 1-sun AM 1.5 G, including UV light in air for unencapsulated devices, shows negligible degradation for hours. Our experiments indicate the effect of ferroelectricity, however alternative conducting mechanisms affected by the accumulation of charges or the migration of ions (or the combination of them) cannot be ruled out. Our results demonstrate, for the first time, the application of a ferroelectric oxide as an electron extraction material in efficient and stable PSCs. These findings are also a step forward in the development of next generation ferroelectric oxide-based electronic and optoelectronic devices.
Mohammad Khaja Nazeeruddin, Peng Gao
Michael Graetzel, Mohammad Khaja Nazeeruddin, Shaik Mohammed Zakeeruddin, Paul Joseph Dyson, Ursula Röthlisberger, David Lyndon Emsley, Fatemeh Ansari, Felix Thomas Eickemeyer, Lukas Pfeifer, Nikolaos Lempesis, Virginia Carnevali, Ümmügülsüm Günes, Likai Zheng, Vladislav Slama, Tristan Axel Georges, Andrea Vezzosi
Michael Graetzel, Shaik Mohammed Zakeeruddin, Felix Thomas Eickemeyer