ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

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Publications associées (31)

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Igor Stolichnov, Mihai Adrian Ionescu, Wolfgang Amadeus Vitale, Emanuele Andrea Casu, Nicolò Oliva

We propose and experimentally demonstrate top-gated complementary n- and p-type black phosphorous field effect devices (FETs) by engineering the workfunction of pre-patterned electrodes embedded in a SiO2 bottom layer. Pre-patterned electrodes offer the ad ...

2018

Stretchable and Highly Bendable Thin Film Transistors Based on Atomically Thin Chemical Vapor Deposited Molybdenum Disulfide

Yen-Cheng Kung

Two-dimensional (2D) materials have received tremendous research attention recently, as they possess peculiar physical properties in their monolayer and few-layer forms, which further lead to novel applications. A wide range of 2D materials covers insulato ...

EPFL2018

A single chip electron spin resonance detector based on a single high electron mobility transistor

Giovanni Boero, Alessandro Valentino Matheoud, Nergiz Sahin Solmaz

Single-chip microwave oscillators are promising devices for inductive electron spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter samples. Two major problems of the previously reported designs were the large minimum microwave magne ...

Academic Press Inc - Elsevier Science2018

In-Plane-Gate GaN Transistors for High-Power RF Applications

Elison de Nazareth Matioli, Giovanni Santoruvo

In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...

Institute of Electrical and Electronics Engineers2017

Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

Giovanni Boero, Jürgen Brugger, Jens Anders, Henrik Moodysson Rønnow, Ivica Zivkovic, Gabriele Gualco, Alessandro Valentino Matheoud

We report on the design and characterization of single-chip electron spin resonance (ESR) detectors operating at 50 GHz, 92 GHz, and 146 GHz. The core of the single-chip ESR detectors is an integrated LC-oscillator, formed by a single turn aluminum planar ...

Academic Press Inc - Elsevier Science2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Ahmet Avsar

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lac ...

Nature Publishing Group2017

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...

EPFL2016

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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