ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

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The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of device fabrication but also its principle of operation. The device has been largely used in low-n ...

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

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ZrO2/InAlN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions

Chattez avec Graph Search

CJM: A Compact Model for Double-Gate Junction FETs

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

In-Plane-Gate GaN Transistors for High-Power RF Applications

Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Grain boundaries and quantum transport in monolayer MoS2

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Contact resistance effects in organic n-channel thin-film transistors

Stretchable and Highly Bendable Thin Film Transistors Based on Atomically Thin Chemical Vapor Deposited Molybdenum Disulfide

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

A single chip electron spin resonance detector based on a single high electron mobility transistor