Multi-gate vibrating-body field effect transistor (VB-FETs)

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Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

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Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

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We present a formalism, algorithms and tools to synthesise reactive systems that behave efficiently, i.e., which achieve an optimal trade-off between a given cost and reward model. Synthesis aims to automatically generate a program from a specification. Mo ...

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

Modern operating systems create ephemeral virtual-to-physical mappings for a variety of purposes, ranging from the implementation of interprocess communication to the implementation of process tracing and debugging. With succeeding generations of processor ...

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transis ...

In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (Complementary Metal-Oxide-Semiconductor) technology, trying to follow as much as possible the empirical Moore's Law. In the last five years this trend has be ...

We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

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Device drivers today lack two important properties: guaranteed safety and cross-platform portability. We present an approach to incrementally achieving these properties in drivers, without requiring any changes in the drivers or operating system kernels. W ...

Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...

Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...

Multi-gate vibrating-body field effect transistor (VB-FETs)

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Ultra low quantum decoherence nano-optomechanical systems

Adaptive Body Biasing in Strong Body Factor Technologies

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Micromechanical resonators with sub-micron gaps filled with high-k dielectrics

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Synthesizing efficient systems in probabilistic environments

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

A Portable Kernel Abstraction for Low-Overhead Ephemeral Mapping Management

The Vibrating Body Transistor

Active multi gate micro-electro-mechanical device with built-in transistor

Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Nanogap MEM resonators on SOI

Monolithic Integration of Silicon Nanowires With a Microgripper

Reverse-Engineering Drivers for Safety and Portability

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices