Gradient flow emulation using drift diffusion processes

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Flashover is a major limiting factor for the transmission and miniaturization of high-power microwave (HPM) devices. We conducted a study to investigate the developmental process of surface flashover on HPM dielectric windows through particle-in-cell-Monte ...

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

The ultrafast dynamics of charge carriers in solids plays a pivotal role in emerging optoelectronics, photonics, energy harvesting, and quantum technology applications. However, the investigation and direct visualization of such nonequilibrium phenomena re ...

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Thermally stimulated current (TSC) is a widely used technique to assess trap states and extract their density, energy, and capture rate using analytical expressions. In many cases, the latter are derived from physical models pertaining to inorganic semicon ...

Stoichiometric silicon nitride (Si3N4) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not ava ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in det ...

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

Designing efficient yet robust photoanodes for water oxidation stands out as a major bottleneck in the realization of a feasible photoelectrochemical tandem cell for solar water splitting. Spinel copper ferrite (CuFe2O4) has been recently reported as a pot ...

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

Modeling photoelectric effects in semiconductors with electrical simulators is demonstrated in typical 1-D and 2-D architectures. The concept is based on a coarse meshing of the semiconductor with the so-called generalized lumped devices, where equivalent ...

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

The formation of photoexcited states in organic semiconductors, their separation into long-lived or stable charge carriers, as well as the charge transport are critical processes relevant to several important research fields and emerging technologies. Whil ...

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

Gradient flow emulation using drift diffusion processes

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Investigation of sheath structure in surface flashover induced by high-power microwave

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Ultrafast Electron Microscopy of Nanoscale Charge Dynamics in Semiconductors

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Scrutinizing thermally stimulated current transients originating from trapped charges in organic semiconductors: A drift-diffusion study

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

New metric for carrier selective contacts for silicon heterojunction solar cells

In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells

Energy Efficient Sensing using Steep Slope Devices

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Insights into the interfacial carrier behaviour of copper ferrite ( CuFe2O4) photoanodes for solar water oxidation

Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

Grain boundaries and quantum transport in monolayer MoS2

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Long-lived Photo-Charges in 1D Helical Organic Semiconductor Nanostructures

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control