Publication

Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Publications associées (30)

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Jeremy Luterbacher, Farzaneh Talebkeikhah, Songlan Sun

Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

2023

Thermo-hydro-mechanical analysis of the complete lifetime of the bentonite barrier in the FEBEX in-situ test

Lyesse Laloui, Alessio Ferrari, Yafei Qiao, Jose Antonio Bosch Llufriu

The FEBEX test was a large-scale demonstration project for the deep geological disposal concept of nuclear waste involving bentonite seals that lasted 18 years. One of the objectives of the test was to evaluate the capabilities of numerical methods to prov ...

2023

A low-temperature prismatic slip instability in Mg understood using machine learning potentials

William Curtin, Xin Liu, Binglun Yin, Tao Liu

Prismatic slip in magnesium at temperatures T

PERGAMON-ELSEVIER SCIENCE LTD2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Shearing and opening of a pre-existing discontinuity in response to fluid injection

Brice Tanguy Alphonse Lecampion, Ankit Gupta, Alexis Alejandro Sáez Uribe

We investigate the fluid-driven growth of a shear crack along a frictional discontinuity and its transition to hydraulic fracturing (sometimes referred to as hydraulic jacking) under plane-strain conditions. We focus on the case of a constant friction coef ...

2023

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Three-dimensional stress state during dynamic shear rupture propagation along frictional interfaces in elastic plates

Jean-François Molinari, Roozbeh Rezakhani

The state of stress in plates, where one geometric dimensions is much smaller than the others, is often assumed to be of plane stress. This assumption is justified by the fact that the out-of-plane stress components are zero on the free-surfaces of a plate ...

ELSEVIER2022