Single field effect transistor capacitor-less memory device and method of operating the same

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (32)

Page 2 sur 2

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Giovanni De Micheli, Heinz Riener, Alessandro Tempia Calvino, Akash Kumar

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Thermodynamics of organic electrochemical transistors

Matteo Cucchi

Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework t ...

Nature Portfolio2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

On the Modeling of Organic Electrochemical Transistors

Matteo Cucchi

Due to their synaptic functionality based on interacting electronic and ionic charge carriers, organic electrochemical transistors (OECTs) appeal as highly attractive candidates for a new generation of organic neuromorphic devices. Despite their acknowledg ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

Aleksandra Radenovic, Andras Kis, Zhenyu Wang, Mukesh Kumar Tripathi, Guilherme Migliato Marega

Machine learning and signal processing on the edge are poised to influence our everyday lives with devices that will learn and infer from data generated by smart sensors and other devices for the Internet of Things. The next leap toward ubiquitous electron ...

2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we descri ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019