Analysis of Substrate Currents Propagation in HVCMOS technology

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When designing in Smart Power technologies, TCAD simulations are mandatory to design effective passive protections against parasitic couplings due to minority carriers. The objective of this paper is to propose a spice-based approach to characterize electr ...

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We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photoca ...

Minority carriers diffusion currents are particularly important in parasitic substrate couplings of Smart Power ICs. In CMOS technologies the P-substrate potential is imposed by P+ contacts and N-wells by N+ highly doped implantations. The doping concentra ...

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This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...

This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...

A new methodology for modeling minority carriers diffusion in Smart Power ICs substrate using standard circuit simulators has been proposed by EPFL. For this purpose, a parasitic substrate network consisting of lumped elements is extracted from the circuit ...

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Crystalline silicon (c-Si) homojunction solar cells account for over 90% of the current photovoltaic market. However, further progress of this technology is limited by recombinative losses occurring at their metal-semiconductor contacts. The goal of this t ...

Analysis of Substrate Currents Propagation in HVCMOS technology

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Spice Simulation of Passive Protection in Smart Power ICs

Linear and Time-Resolved THz Spectroscopy of Photonic and Charge Transporting Systems

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Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Impact of enhanced contact doping on minority carriers diffusion currents

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A circuit-level substrate current model for smart-power ICs

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Passivating contacts for homojunction solar cells using a-Si:H/c-Si hetero-interfaces