Physics-based compact model for ultra-scaled FinFETs

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This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

Physics-based compact model for ultra-scaled FinFETs

Chattez avec Graph Search

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