Publications associées à Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Molecular intercalation in the van der Waals antiferromagnets FePS3 and NiPS3

Bruce Normand, Xiaoyu Xu, Sheng Xu, Ying Chen, Zeyu Wang, Shuo Li, Weiqiang Yu

We have performed electrochemical treatment of the van der Waals antiferromagnetic materials FePS3 and NiPS3 with the ionic liquid EMIM-BF4, achieving significant molecular intercalation. Mass analysis of the intercalated compounds, EMIMx-FePS3 and EMIMx-N ...

Amer Physical Soc2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

Clément Marie Soulard

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Magnon-Assisted Magnetization Reversal of Ni81Fe19 Nanostripes on Y3Fe5O12 with Different Interfaces

Dirk Grundler, Korbinian Baumgärtl, Andrea Mucchietto

Magnetic bit writing by short-wave magnons without conversion to the electrical domain is expected to be a game-changer for in-memory computing architectures. Recently, the reversal of nanomagnets by propagating magnons was demonstrated. However, experimen ...

2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Spin Textures in 2D Magnets

Lukas Powalla

The continuous reduction of the structural size in nanotechnology slowed down over the last decade, approaching the natural limit of single atoms as building blocks of matter. Therefore, intensive research is directed toward exploring new frontiers, in par ...

EPFL2023

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Magnetic excitations in the topological semimetal YbMnSb2

Jian Rui Soh

We report neutron scattering measurements on YbMnSb2 which shed light on the nature of the magnetic moments and their interaction with Dirac fermions. Using half-polarized neutron diffraction we measured the field-induced magnetization distribution in the ...

AMER PHYSICAL SOC2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Hsin Tseng, Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

Jacqueline Geler Kremer

Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023

Valence Orbitals Driving the Spin Dynamics in a Rare-Earth Single-Atom Magnet

Harald Brune, François Patthey, Stefano Rusponi, Marina Pivetta, Dante Philippe Sblendorio, Alberto Curcella

We combine spin-polarized scanning tunneling microscopy with quantum master equation analysis to investigate the spin dynamics of the single atom magnet Dy on graphene/Ir(111). By performing reading and writing experiments, we show that the strongly spin p ...

AMER PHYSICAL SOC2023

Programmable Silicon Nitride Photonic Integrated Circuits

Rui Ning Wang, Tobias Kippenberg, Andrey Voloshin, Anat Siddharth, Viacheslav Snigirev, Andrea Bancora, Vladimir Shadymov

Silicon Nitride (Si3N4) photonic integrated circuits (PICs) have emerged as core technology in a variety of applications ranging from LIDAR to quantum control and computing. However, the need for high-speed, low-voltage tuning and modulation has been a lon ...

IEEE2023

The Impact of Lattice Distortions on the Magnetic Stability of Single Atoms: Dy and Ho on BaO(100)

Harald Brune, Stefano Rusponi, Marina Pivetta, Darius Constantin Merk, Sébastien Reynaud, Boris Sorokin

X-ray magnetic circular dichroism, atomic multiplet simulations, and density functional theory calculations are employed to identify criteria for the optimum combination of supporting alkaline earth oxide and adsorption site maximizing the spin lifetimes o ...

WILEY-V C H VERLAG GMBH2023

Long Spin Lifetime in Rare-Earth Single-Atom Magnets at Surfaces

Boris Sorokin

Further miniaturisation of magnetic storage devices requires an advent of new types of magnets, since classical ferromagnetic materials show lack of remanence at nano- and subnanoscale. A single atom can represent the smallest possible bit of information. ...

EPFL2022

Ferroelectric Effects Probed by in situ Transmission Electron Microscopy

Reinis Ignatans

Ferroelectric perovskite oxides are widely used in sensors, actuators and optical modulators and, at the same time, they show promise for implementation in future applications such as energy storage, memory and cooling devices. At the infancy of the discov ...

EPFL2022