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Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

Publications associées (30)

Thermodynamics of organic electrochemical transistors

Though models describing the operating mechanism of organic electrochemical transistors (OECTs) have been developed, these models are unable to accurately reproduce OECT electrical characteristics. Here, the authors report a thermodynamic-based framework t ...

Nature Portfolio2022

Stress effects on the impedance and ferroelectricity of PVDF-BiFeO3-MWCNT films using xanthan gum as dispersant

Frank Nüesch, Francis Owusu

Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...

ELSEVIER SCIENCE SA2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Reinforced polypyrrole with 2D graphene flakes decorated with interconnected nickel-tungsten metal oxide complex toward superiorly stable supercapacitor

Ulf Anders Hagfeldt, Seyyed Alireza Hashemi

Prompt development of electronic devices and sensors raised the requirement for design/fabrication of advanced energy sources capable of providing considerable amount of energy for consuming platforms through practical nanotechnological approaches. For thi ...

ELSEVIER SCIENCE SA2021

High Frequency Operation of Series-Connected IGCTs for Resonant Converters

Drazen Dujic, Gabriele Ulissi

Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...

2021

Electrical transport properties of Ru1-xTixO2 films deposited by magnetron sputtering technique

Rosendo Sanjines, Silviu Cosmin Sandu

The optical and electrical properties of Ru1-xTixO2 (0

PERGAMON-ELSEVIER SCIENCE LTD2021