Microstructure of Al95.5Cr2.5Si2(N1-xOx) thin films covering from nitrides to oxides

Al95.5Cr2.5Si2(N1-xOx) thin films were prepared using pulsed DC-magnetron sputtering at 650 degrees C by changing the oxygen to nitrogen ratio (O-2/(O-2 + N-2)) in the reactive gas. The obtained films were characterized by various techniques including XRD, XPS, SEM, HRTEM and nano-indentation. By probing the structural and mechanical properties of the films, the existences of three distinct modes were confirmed in the synthesis stages with respect to the oxygen content, x. In the nitride mode with x