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Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design

Christian Enz, Eric Vittoz
2006
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Christian Enz, Eric Vittoz
2006
Books

Source officielle

Publications associées (16)

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https://infoscience.epfl.ch/entities/publication/77c6fc2e-e6e7-4d56-8eab-d321d613735e

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Publications associées (16)

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Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

Mihai Adrian Ionescu, Michele Ghini, Fabio Bersano, Niccolò Martinolli, Eloi Régis L Collette

This paper introduces a novel integration method of localized metallic back-gates into fully-depleted silicon-on-insulator (FDSOI) multi-gate FETs, enabling robust front-to-back electrostatic coupling from room temperature to cryogenic conditions, without ...

2025

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019