Publications associées à Multi-Terminal Am-Bipolar Memristive Devices for Emerging Logic and Memory Architectures

Publications associées (16)

Superconductive Electronics: A 25-Year Review

The challenges of conventional semiconducting electronics, such as dark silicon, memory wall, and stagnant clock frequency motivate the search for alternative computing technologies. Superconductive electronics (SCE) represents one of the most advanced bey ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Efficient Cu2O Photocathodes for Aqueous Photoelectrochemical CO2 Reduction to Formate and Syngas

Michael Graetzel, Shaik Mohammed Zakeeruddin, Kevin Sivula, Mounir Driss Mensi, Dan Ren, Yongpeng Liu, Jing Gao, Linfeng Pan, Jun Li, Meng Xia

Photoelectrochemical carbon dioxide reduction (PEC-CO2R) represents a promising approach for producing renewable fuels and chemicals using solar energy. However, attaining even modest solar-to-fuel (STF) conversion efficiency often necessitates the use of ...

Amer Chemical Soc2023

Thin film organic electrochemical transistors based on hybrid PANI/PEDOT:PSS active layers for enhanced pH sensing

Danick Briand, Silvia Demuru, Brince Paul Kunnel

We report on organic electrochemical transistors (OECTs) with active channels made of hybrid inkjet-printed poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and electropolymerized polyaniline (PANI) layers, exhibiting simultaneously impro ...

2021

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electro ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Predictive Reliability and Fault Management in Exascale Systems

David Atienza Alonso, Marina Zapater Sancho

Performance and power constraints come together with Complementary Metal Oxide Semiconductor technology scaling in future Exascale systems. Technology scaling makes each individual transistor more prone to faults and, due to the exponential increase in the ...

2020

SAT-Based Exact Synthesis for Multi-Level Logic Networks

Winston Jason Haaswijk

Today, the design of electronic systems is largely automated. The practice of using software automation technologies for the design of electronic hardware is commonly referred to as Electronic Design Automation (EDA). EDA comprises a large set of tools, fr ...

EPFL2019

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Philipp Friedrich Hermann Löper, Philippe Wyss, Gizem Nogay, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017

Optoelectronic Devices Based on Monolayer Transition Metal Dichalcogenides

Oriol López Sánchez

Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...

EPFL2016

Engineered substrates with embedded strain relief for stretchable thin-film electronics

Alessia Romeo

Stretchable electronics are integrated circuitry that can reversibly expand and relax while retaining their functionality. This emerging technology has great potential in unconventional electronic application areas, especially in biomedical sector. To atta ...

EPFL2015

Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

This paper aims to model asymmetric operation in double gate junctionless FETs. Following a rigorous approach, we find that asymmetric operation can be simulated by combining two symmetric junctionless FETs, what we call the virtual symmetric device concep ...

Institute of Electrical and Electronics Engineers2014

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014

Ultra low power NEMFET based logic

Mihai Adrian Ionescu, Antonios Bazigos, Surya Shankar Dan

In this paper, we introduce a Nano-Electro-Mechanical Field Effect Transistor (NEMFET) based logic family tailored to the implementation of low speed and ultra low energy functional units and processors. Basic Boolean gates implemented with NEMFETs only ar ...

IEEE2013

Calibration of Ultra-high-precision Robots Operating in an Unsteady Environment

Emanuele Lubrano

In recent years nanotechnology has become an enabling technology for the development and fabrication of new innovative products. The growth of micro- and nano-manufacturing lies in the ability of converting micro- and nano-fabrication techniques into mass- ...

EPFL2011

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

Surface plasmon coupling to nanoscale Schottky-type electrical detectors

Klaus Kern, Marko Burghard

We have investigated the near-field coupling of surface plasmons to a titanium/CdS nanowire interface for two different device configurations. A bare aluminum grating on an underlying aluminum layer exhibited the expected stronger electrical signal for per ...

AIP American Institute of Physics2010