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Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Publications associées (29)

Energy dissipation in fiber-polymer composites adhesive joints under cyclic loading

Sustainable development has emerged as a paramount consideration in various fields of industry, including construction, to preserve the environment and its finite resources. Lightweight structures, such as fiber-polymer composite structures, address both s ...

EPFL2023

Intrinsic-Strain Engineering by Dislocation Imprint in Bulk Ferroelectrics

Dragan Damjanovic, Fangping Zhuo

We report an intrinsic strain engineering, akin to thin filmlike approaches, via irreversible hightemperature plastic deformation of a tetragonal ferroelectric single-crystal BaTiO3. Dislocations wellaligned along the [001] axis and associated strain field ...

AMER PHYSICAL SOC2023

In-situ atomic level observation of the strain response of graphene lattice

Klaus Kern, Jz -Yuan Juo

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...

Nature Portfolio2023

Influence of Fiber Orientation on the Elastic Limit Tensile Stress of UHPFRC

Eugen Brühwiler, Emmanuel Denarié, Jian Zhan

The elastic limit tensile stress of UHPFRC is governed by contributions of the cementitious matrix and the fibrous skeleton. This paper finds that fiber orientation has significant influence on the matrix tensile strength of UHPFRC, while this is not consi ...

2023

Bounding the localized to ductile transition in porous rocks: implications for geo-reservoirs

Marie Estelle Solange Violay, Gabriel Gérard Dominique Meyer

Porous rocks have long been the focus of intense research driven by their importance in our society as host to our most essential resources (oil, gas, water, geothermal energy, etc), yet their rheology remains poorly understood. With increasing depth, poro ...

2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Yanfei Zhao, Juan Francisco Gonzalez Marin, Ahmet Avsar, Cheol Yeon Cheon, Kristians Cernevics, Zhenyu Wang, Mukesh Kumar Tripathi, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Igor Stolichnov, Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023

Towards a multiscale point cloud structural similarity metric

Touradj Ebrahimi, Davi Nachtigall Lazzarotto

Point clouds are effective data structures for the rep- resentation of three-dimensional media and hence adopted in a wide range of practical applications. In many cases, the portrayed data is expected to be visualized by humans. After acquisition, point c ...

IEEE2023

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Sergey Fedorov, Nils Johan Engelsen, Alberto Beccari

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022