Publications associées à UV-induced luminescence and photosensitivity in bismuth-aluminum doped optical fibers

Publications associées (6)

Integrated microwave photonics using thin-film lithium niobate on silicon nitride

Lithium niobate (LiNbO3) is a key material in photonics due to its exceptional properties. The linear electro-optic effect, also known as the Pockels effect, in lithium niobate induces a linear change in the refractive index when an electric field is appli ...

EPFL2024

Development and Characterisation of Silicon Photomultiplier Multichannel Arrays for the Readout of a Large Scale Scintillating Fibre Tracker

Axel Kuonen

The current LHCb detector will continue collecting data until the long shutdown 2 (2019/2020). It will be upgraded in order to operate at higher luminosity. To achieve this, two major changes are required. First the Level-0 hardware trigger limited to 1,M ...

EPFL2018

Acoustic Analogues of High-Index Optical Waveguide Devices

Romain Christophe Rémy Fleury, Farzad Zangeneh Nejad

High index optical waveguide devices such as slab waveguides, strip waveguides and fibers play extremely important roles in a wide range of modern applications including telecommunications, sensing, lasing, interferometry, and resonant amplification. Yet, ...

Nature Research2018

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Philipp Friedrich Hermann Löper, Philippe Wyss, Gizem Nogay, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017

Optoelectronic Devices Based on Monolayer Transition Metal Dichalcogenides

Oriol López Sánchez

Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...

EPFL2016

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

Nicolas Grandjean, Eric Feltin, Denis Martin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy

We demonstrate state-of-the-art p-type (Al) GaN layers deposited at low temperature (740 degrees C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGa ...

Amer Inst Physics2014