Publication

Sondheimer oscillations as a probe of non-ohmic flow in WP2 crystals

Publications associées (29)

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Xinya Niu, Audrey Marie Isabelle Morisset

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Bibliometric Analysis of Model-Based Systems Engineering: Past, Current, and Future

Dimitrios Kyritsis, Yan Yan, Jinzhi Lu

Model-based systems engineering (MBSE) is considered an important approach for understanding multidomain fields and is widely used in complex systems such as aerospace. In this article, a detailed survey of MBSE literature was conducted from its commenceme ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Preliminary Design of a High Current R&W TF Coil Conductor for the EU DEMO

Pierluigi Bruzzone, Kamil Sedlák, Federica Demattè

Paschen failures in ITER, W7-X and JT60 superconducting coils at the acceptance tests have shown that it is highly desirable to lower the coil discharge voltage (U-d) of the DEMO Toroidal Field (TF) coils. Another benefit of lowering the U-d might be the r ...

IEEE Institute of Electrical and Electronics Engineers2022

A Prony-based approach for accelerating the lightning electromagnetic fields computation above a perfectly conducting ground

Farhad Rachidi-Haeri, Marcos Rubinstein

Lightning strikes can seriously affect the reliability and availability of electrical infrastructures. The computation of lightning-electromagnetic fields represents one of the most crucial steps in the evaluation of the induced effects; thus, having at di ...

Elsevier2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Anisotropic and nonlinear transport in microstructured 3D topological semimetals

Xiangwei Huang

Topological semimetals are frequently discussed as materials platforms for future electronics that exploit the remarkable properties of their quasiparticles. These ideas are mostly based on dispersion relations that mimic relativistic particles, such as We ...

EPFL2022

In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells

Ulf Anders Hagfeldt, Henry Snaith, Silver Hamill Turren Cruz

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in det ...

AMER CHEMICAL SOC2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Roadmap on Machine learning in electronic structure

Michele Ceriotti, Andrea Grisafi, Max David Veit, Jigyasa Nigam

In recent years, we have been witnessing a paradigm shift in computational materials science. In fact, traditional methods, mostly developed in the second half of the XXth century, are being complemented, extended, and sometimes even completely replaced by ...

IOP Publishing Ltd2022