Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

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Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

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A perspective on multi-channel technology for the next-generation of GaN power devices

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A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Adaptive Body Biasing in Strong Body Factor Technologies

GaN vertical power devices on silicon substrates

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes