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Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

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Publications associées (34)

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Small-Signal Approach for Precise Evaluation of Gate Losses in Soft-Switched Wide-Band-Gap Transistors

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

High-frequency switching is favorable for fast transient response, small size of passive components and superior power density, especially in soft-switching topologies. At high frequencies, power dissipation due to consecutive charging/discharging of gate ...

IEEE2020

Structure and properties of Fe-modified Na_{0.5}Bi_{0.5}TiO_{3} at ambient and elevated temperature

Dragan Damjanovic

Sodium bismuth titanate (NBT) ceramics are among the most promising lead-free materials for piezoelectric applications. This work reports the crystal structure and phase evolution of NBT and Fe-modified NBT (from 0-2 at.% Fe) using synchrotron x-ray diffra ...

2012

Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes

Paul Muralt, Andrea Mazzalai, Nachiappan Chidambaram

Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, a ...

Institute of Electrical and Electronics Engineers2012

Domain annihilation due to temperature and thickness gradients in single-crystal BaTiO3

The manner in which 90. ferroelectric-ferroelastic domains respond to changes in temperature has been mapped in BaTiO3 single crystals using atomic force microscopy. Domain periodicity remains unaltered until approximately 2 degrees C below the Curie tempe ...

2012

Electroluminescence of Single InGaN/GaN Micropyramids

Hua Zhang, Gwénolé Jean Jacopin

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phas ...

PLEIADES PUBLISHING INC2019

Al0.83Sc0.17N Contour-Mode Resonators With Electromechanical Coupling in Excess of 4.5%

Paul Muralt, Luis Guillermo Villanueva Torrijo, Andrea Lozzi

In this paper, we demonstrate the fabrication of contour-mode resonators (CMRs) with Al0.83Sc0.17N as a piezoelectric layer. Moreover, we assess the electromechanical coupling and the maximum achieved quality factor from 150 to 500 MHz. In comparison to pu ...

2019

Theoretical and Experimental Study of Piezoelectric Modulated AlN Thin Films for Shear Mode BAW Resonators

Evgeny Milyutin

The use of acoustic resonators for sensors application has opened a new branch in research and applications of piezoelectric materials and devices. The first generation of such sensors is constituted by the quartz crystal microbalance (QCM) based on AT-cut ...

EPFL2011

Growth, Integration, and Functional Characterization of AlScN Thin Films for RF MEMS Devices

Fazel Parsapour

Mobile communication has grown explosively in recent years, leading to a strong demand for cheap, but high-performing bandpass filters with low insertion loss and smaller size. Surface acoustic wave (SAW) and thin film bulk acoustic wave (BAW) resonators r ...

EPFL2019

Origins of electro-mechanical coupling in polycrystalline ferroelectrics during subcoercive electrical loading

Dragan Damjanovic

The electromechanical coupling in ferroelectric materials is controlled by several coexisting structural phenomena which can include piezoelectric lattice strain, 180 degrees and non-180 degrees domain wall motion, and interphase boundary motion. The struc ...

Wiley-Blackwell2011

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019

AIN Thin Film Structures for High-Q Resonators

The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...

EPFL2010

Differential Response of the Photoluminescence and Photocurrent of Polycrystalline CH(3)NH(3)PbI(3 )and CH3NH3PbBr3 to the Exposure to Oxygen and Nitrogen

László Forró, Andrzej Sienkiewicz, Endre Horvath, Márton Kollár, Anastasiia Glushkova, Konstantins Mantulnikovs

Because of their excellent photoelectric properties, organic-inorganic metal halide perovskites (MHPs), such as methylammonium lead triiodide, CH3NH3PbI3 (MAPbI(3)), and methylammonium lead tribromide, CH3NH3PbBr3 (MAPbBr(3)), are of great interest for the ...

2019

Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy

Nava Setter, Dragan Damjanovic, Naama Klein

The structural phase diagram of the Pb-free ferroelectric (Na1/2Bi1/2)1−xBaxTiO3, x

2010

Piezoelectric materials parameters for piezoelectric thin films in GHz applications

Paul Muralt, Marco Cantoni

Piezoelectric thin films have existing and promising new applications in microwave filter technologies. The final performance depends on many parameters, and very specifically on the materials properties of each involved material. In this article, material ...

Cambridge University Press2009