Publication

Finite-temperature flexoelectricity in ferroelectric thin films from first principles

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In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

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The speed of change in the modern world is impressive. Within the last 50 years, many devices and technologies have significantly transformed their appearance, intrinsic characteristics and improved their performance. Computers have changed from the size o ...

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Induced giant piezoelectricity in centrosymmetric oxides

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Piezoelectrics are materials that linearly deform in response to an applied electric field. As a fundamental prerequisite, piezoelectric materials must have a noncentrosymmetric crystal structure. For more than a century, this has remained a major obstacle ...

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To advance the field of piezoelectrics, it is desirable to find materials that combine high piezoelectricity with high elasticity. Applications such as self-sensors, stretchable electronics, soft robots, and energy harvesting would benefit tremendously. Ho ...

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Ferroelectric Effects Probed by in situ Transmission Electron Microscopy

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Ferroelectric perovskite oxides are widely used in sensors, actuators and optical modulators and, at the same time, they show promise for implementation in future applications such as energy storage, memory and cooling devices. At the infancy of the discov ...

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Dielectric properties of 3-3 flexible composites by infiltration of elastomers into porous ceramic structures using cellulose scaffold

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Elastomer composites are prepared by infiltrating polydimethylsiloxane (PDMS) into a porous ceramic structure of nanoparticles. This method differs from the conventional approach, where particles are dispersed into the polymer matrix, since here, the polym ...

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Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

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Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

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Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

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Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

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Transient Elastomers with High Dielectric Permittivity for Actuators, Sensors, and Beyond

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Dielectric elastomers (DEs) are key materials in actuators, sensors, energy harvesters, and stretchable electronics. These devices find applications in important emerging fields such as personalized medicine, renewable energy, and soft robotics. However, e ...

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Microscopic picture of paraelectric perovskites from structural prototypes

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We highlight with first-principles molecular dynamics the persistence of intrinsic < 111 > Ti off-centerings for BaTiO3 in its cubic paraelectric phase. Intriguingly, these are inconsistent with the Pm (3) over barm space group often used to atomistically ...

AMER PHYSICAL SOC2022