Publications associées à Double gate tunnel FET with ultrathin silicon body and high-k dielectric

Publications associées (10)

Modeling the Effects of Interface Traps on DC Characteristics in GaN High-Electron-Mobility Transistors

This paper presents a physics-based analytical model for investigating charge trapping in GaN high-electron-mobility transistors (HEMTs), using the École Polytechnique Fédérale de Lausanne HEMT core model. It introduces a realistic continuous density of in ...

2025

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

Graphene Field Effect Devices and Circuits : Theory and Fabrication

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

Christophe Ballif

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Light trapping in thin-film solar cells measured by Raman spectroscopy

Christophe Ballif, Grégory Bugnon, Etienne Antoine Julien Moulin, Martin Ledinsky

In this study, Raman spectroscopy is used as a tool to determine the light-trapping capability of textured ZnO front electrodes implemented in microcrystalline silicon (mu c-Si:H) solar cells. Microcrystalline silicon films deposited on superstrates of var ...

American Institute of Physics2014

Controlling conjugated polymer morphology and charge carrier transport with a flexible-linker approach

Sébastien Jacky Daniel Bivaud, Kevin Sivula, Andrea Gasperini

The Stille-coupling polymerization of a short conjugated polymer with an aliphatic linker was used to demonstrate a prototype in a new class of polymer semiconductors wherein the conjugation segment length and the length of the entire chain can be independ ...

Royal Soc Chemistry2014

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Gwénolé Jean Jacopin

We report on the mixed photovoltaic/photoconductive operation mode of a visible blind photodetector based on GaN nanowires containing a p-i-n junction. The photodetector operates as a photovoltaic device close to zero bias and exhibits a photoconductive ga ...

Amer Inst Physics2014

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Mihai Adrian Ionescu, Livio Lattanzio, Giovanni Antonio Salvatore

Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches, suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown ...

IEEE2010

Charge collection and pore filling in solid-state dye-sensitized solar cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Robin Humphry-Baker, Peter Chen, Ilkay Cesar

The solar to electrical power conversion efficiency for dye-sensitized solar cells (DSCs) incorporating a solid-state organic hole-transporter can be over 5%. However, this is for devices significantly thinner than the optical depth of the active composite ...

2008