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LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

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Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

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LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

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The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

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