Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

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Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

The effects of gamma-radiation on the properties of Brillouin scattering in standard Ge-doped optical fibres

Luc Thévenaz, Dario Alasia

We have experimentally studied the effects of gamma-radiation up to very high total doses on the physical properties of Brillouin scattering in standard commercially available optical fibres. A frequency variation of about 5 MHz for both Brillouin frequenc ...

IOP Publishing2006

Development and validation of data sets and Monte Carlo methods for electron/positron transport at low and medium energies

Cezarina Elena Negreanu

When exposed to ionising radiation, living tissue can potentially suffer somatic and genetic damage - effects depending mainly on the radiation dose or energy absorbed, the type of radiation, and the type and mass of cells affected. It is well known that l ...

EPFL2005

Effects of neutron irradiation on the microstructure and mechanical properties of the heat affected zone of stainless steel welds

Raluca Schibli

The effects of neutron irradiation on austenitic stainless steels, usually used for the manufacturing of internal elements of nuclear reactors (e.g. the core shrouds), are the alteration of the microchemistry and the microstructure, and, as a consequence, ...

EPFL2005

Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key pa ...

2017

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Total ionizing dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad

Chunmin Zhang, Alessandro Pezzotta

This paper presents the results of an irradiation study on single transistors manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET and pMOSFET transistors have been irradiated and electrical parameters have been measured. Fo ...

2017

GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

The DC performance of both n- and pMOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS tech ...

IEEE2016

Modelling oriented investigations of primary radiation damage in ultra high purity Fe and FeCr alloys

Anna Prokhodtseva

In the quest of the structural materials for the future fusion reactor, it has been shown that ferritic/martensitic (F/M) steels are very promising candidates, with a good radiation resistance in terms of damage accumulation in the microstructure relative ...

EPFL2013