Explicit Charge Density Modeling in MIS-HEMTs

Metal–Insulator–Semiconductor High Electron Mobility Transistors (MIS-HEMTs) demonstrated to offer significant advantages for power electronics. The presence of an insulating layer beneath the gate enables operation at relatively high gate voltages, effectively mitigating conventional gate leakage issues. However, operation beyond the charge neutrality point leads to mobile charge accumulation under the gate insulator, resulting in the formation of a second channel. In this work, we present an explicit calculation method for determining charge densities both in the quantum well and in the barrier region beneath the gate insulator. The proposed method is design-oriented and suitable for implementation in circuit simulators.