Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs

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Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

Free-electron lasers and high-harmonic-generation table-top systems are new sources of extreme-ultraviolet to hard X-ray photons, providing ultrashort pulses that are intense, coherent and tunable. They are enabling a broad range of nonlinear optical and s ...

We experimentally demonstrate broadband degenerate continuous-wave four-wave mixing in long silicon nitride (Si3N4) waveguides for operation both in the telecommunication L-band and the thulium band near 2 mu m by leveraging polarization dependence of the ...

Programmable photonic integrated circuits are emerging as an attractive platform for applications such as quantum information processing and artificial neural networks. However, current programmable circuits are limited in scalability by the lack of low-po ...

Remote coupling between quantum emitters is of great importance for constructing quantum networks. Conventionally, this can be achieved via photon exchange by incorporating the quantum emitters in a waveguide or a large cavity. However, such photonic struc ...

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of the drain current versus gate voltage, which reduces the current in weak and ...

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in devices whos ...

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

The results of studies of technological conditions of formation of LEDs on the basis of an InGaN/GaN micropyramid in the core/shell geometry using a semi-transparent Ni/Au/graphene contact have been presented. The structures have been formed by the method ...

We report on a fully CMOS compatible fabrication method for ambipolar silicon nanowire FinFETs. The low thermal budget processing, compatible with monolithic 3D device integration, makes use of low pressure chemical vapor deposition (LPCVD) of amorphous Si ...

Towards integrated photonic interposers for processing octave-spanning microresonator frequency combs

Chattez avec Graph Search

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Progress and prospects in nonlinear extreme-ultraviolet and X-ray optics and spectroscopy

Polarization selective ultra-broadband wavelength conversion in silicon nitride waveguides

Silicon photonic microelectromechanical phase shifters for scalable programmable photonics

Remote excitation between quantum emitters mediated by an optical Fano resonance

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Inflection Phenomenon in Cryogenic MOSFET Behavior

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Fabrication and Study of Optical Properties of LEDs Based on GaN Micropyramids with a Ni/Au/Graphene Semi-Transparent Contact

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate