Publications associées à Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Publications associées (6)

Stencil-Based Selective Surface Functionalization of Silicon Nanowires in 3D Device Architectures for Next-Generation Biochemical Sensors

Surface functionalization of 1D materials such as silicon nanowires is a critical preparation technology for biochemical sensing. However, existing nonselective functionalization techniques result in nonlocal binding and contamination, with potential devic ...

Amer Chemical Soc2024

Exploring optically active defects in wide-bandgap materials using fluorescence microscopy

Evgenii Glushkov

Defects in solid-state systems can be both detrimental, deteriorating the quality of materials, or desired, thanks to the novel functionality they bring. Optically active point defects, producing fluorescent light, are a great example of the latter. Natura ...

EPFL2021

One plus one greater than two: high-performance inverted planar perovskite solar cells based on a composite CuI/CuSCN hole-transporting layer

Ulf Anders Hagfeldt, Zerrin Yumak

The low-cost and stable inorganic p-type semiconductor copper(i) iodide (CuI) is a promising hole-transporting layer (HTL) material for inverted planar perovskite solar cells (PSCs). However, the power conversion efficiencies (PCEs) of inverted planar PSCs ...

Royal Society of Chemistry2018

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Federico Matteini, Sonia Conesa Boj, Francesca Amaduzzi, Alberto Casadei, Fauzia Jabeen

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Dynamical Coulomb Blockade Observed in Nanosized Electrical Contacts

Wolf-Dieter Schneider, François Patthey

Electrical contacts between nanoengineered systems are expected to constitute the basic building blocks of future nanoscale electronics. However, the accurate characterization and understanding of electrical contacts at the nanoscale is an experimentally c ...

2012

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a catalyst. The process parameter space for successful growth was studied. By optimizing the growth temperature and gas pressure, high aspect ratio germanium n ...

Institute of Physics2009