A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...
The present relates to a nanoporous carbon membrane manufacturing method comprising coating a block copolymer film with hydrophilic and hydrophobic blocks, on a sacrificial non-porous substrate so as to prepare an block copolymer film coated foil, transfer ...
We present an aspect ratio dependent etching (ARDE) method, utilizing the Bosch dry etching process of silicon, to create the optimal silicon master microstructures for replication of polydimethylsiloxane (PDMS) microchannels that allow immobilizing C. ele ...
