Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kips frame rate, fabricated in 180 nm CMOS image sensor technology. We designed two pixels with a pitch of 9.4 mu m in 7 T and 5.75 T configurations respectively, achieving a maximum fill factor of 13.4%. The maximum photon detection probability is 27%, median dark count rate is 2.0 cps, variation in gating length is 120 ps, position skew is 410 ps, and rise/fall time is