CMOS-Based Single-Photon Detectors: Technology and Applications

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Publications associées (29)

Experimental Verification of the Impact of Analog CMS on CIS Readout Noise

Christian Enz, Assim Boukhayma, Raffaele Capoccia

In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with CIS readout chains ...

2020

A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range

Christian Enz, Assim Boukhayma, Antonino Caizzone

This letter introduces a 5-transistors (5T) implementation of CMOS Image Sensors (CIS) pixels enabling the combination of deep sub-electronnoise performance with wide dynamic range (DR). The 5T pixel presents a new technique to reduce the sense node capaci ...

Institute of Electrical and Electronics Engineers2020

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfa ...

2020

CMOS-Based Readout and Control Electronics for Microgrippers

Marco Mattavelli, Diego Ruben Barrettino

This paper presents the design of an application-specific integrated circuit (ASIC) with all the necessary electronic blocks to read out and control Conjugate Surfaces Flexure Hinge (CSFH) microgrippers. The ASIC was fabricated using a high-voltage 0.35 mu ...

IEEE2020

Non-invasive glucose sensor

Assim Boukhayma

An optical device for the in noninvasive determination of the concentration of glucose or another analyte in blood using a combination of Raman spectrometry and PPG. The device includes an optical detector, preferably a CMOS imager including pinned photodi ...

2020

Wide-field time-gated SPAD imager for phasor-based FLIM applications

Claudio Bruschini, Edoardo Charbon, Ivan Michel Antolovic, Arin Can Ülkü, Andrei Ardelean

We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the effect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that th ...

IOP2020

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Humidity Sensors for High Energy Physics Applications: A Review

Sandro Carrara, Amar Kapic, Andromachi Tsirou

Modern silicon-based detectors for high-energy physics operate in an experimental environment with sub-zero temperatures. At those temperatures, even low traces of humidity will produce vapor condensation with damages to the detectors. Monitoring relative ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

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