Publications associées à Topochemical Synthesis and Electronic Structure of High-Crystallinity Infinite-Layer Nickelates on an Orthorhombic Substrate

Publications associées (7)

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Duncan Thomas Lindsay Alexander, Bernat Mundet

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

WILEY2023

Direct Visualization of Atomic-Scale Heterogeneous Structure Dynamics in MnO2 Nanowires

Kangning Zhao

Manganese oxides are attracting great interest owing to their rich polymorphism and multiple valent states, which give rise to a wide range of applications in catalysis, capacitors, ion batteries, and so forth. Most of their functionalities are connected t ...

AMER CHEMICAL SOC2021

Unlocking the potential of boronsilicate glass passivation for industrial tunnel oxide passivated contact solar cells

Reuben Yeo Jueyuan

In this work, we present a breakthrough in boronsilicate glass (BSG) passivated industrial tunnel oxide passivated contact (i-TOPCon) solar cells. We find that a high-temperature firing process significantly improves the front side BSG passivation quality; ...

2021

First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

Samuel Poncé, Feliciano Giustino

One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electro ...

IOP PUBLISHING LTD2020

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Oleg Yazyev, Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Fernando Gargiulo, Diego José Pasquier

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in ele ...

Nature Publishing Group2016

Oxygen Evolution Reaction on La1-xSrxCoO3 Perovskites: A Combined Experimental and Theoretical Study of Their Structural, Electronic, and Electrochemical Properties

Nicola Marzari

The bulk electronic structure, surface composition, conductivity, and electrochemical activity toward the oxygen evolution reaction for the La1-xSrxCoO3 perovskite series (with x = 0, 0.2, 0.4, 0.6, 0.8, 1) are investigated experimentally and theoretically ...

Amer Chemical Soc2015

Is light-induced degradation of a-Si:H/c-Si interfaces reversible?

Christophe Ballif, Stefaan De Wolf, El Mahdi El Mhamdi, Jakub Holovsky, Bénédicte Demaurex

Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soa ...

AIP American Institute of Physics2014