Publication

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

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Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

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Oxide inclusions are inevitably present in steel as a direct consequence of the steelmaking process; as a result, a cubic centimetre of modern steel will generally contain about a million of these hard and brittle micrometre-sized ceramic particles. Inclus ...

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The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

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Tantalum oxide Ta2O5 nanotubes (NTs) were prepared by electrochemical anodization and were decorated with lead sulfide nanoparticles PbS (NPs) by Successive Ionic Layer Adsorption and Reaction commonly known as the SILAR method. The PbS NPs/Ta2O5 NTs were ...

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In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

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Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

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Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

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